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Photoresists, Ancillaries,
Etchants, Solvents, and Technical Support
for all Stages of
MicroStructuring and
Lithography
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Photoresists
Deep-UV Resist
Developers
Remover/Stripper
Thinner/EBR
Adhesion Promotion
Etchants
Etching Mixtures
Solvents
UV - Filter
Si-Wafers
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TI Prime
TI Prime
The TI PRIME adhesion promoter improves resist adhesion
on substrates such as Si or glass
Processing the TI PRIME
Substrate preparation: After (optional, but recommended)
cleaning the substrate with acetone and subsequently
isopropyle, put the substrate on the hotplate at a
minimum temperature of 120 °C for 10 minutes to remove
adsorbed water from the substrates surface.
Alternatively, you can use a furnace at same temperature
for 30 min.
Spin coat the TI PRIME at approx. 2000-4000 U/min for
approx. 20 seconds. After spin-coating, no residual
drops or film of TI PRIME should be visible.
Bake the substrate at 120°C for 2 minutes on the
hotplate (when using a furnace, 130°C for 10 min is
recommended)
Proceed with spin-coating the resist immediately and
proceed as usual.
For further information refer MicroChemicals®TI_Prime.pdf or
Substrate Cleaning Adhesion Photoresist
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