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Photoresists
Deep-UV Resist
Developers
Remover/Stripper
Thinner/EBR
Adhesion Promotion
Etchants
Etching Mixtures
Solvents
UV - Filter
Wafer
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Negative Photoresists
AZ nLOF 2070 (Datasheet as PDF)
AZ 15nXT (Datasheet as PDF)
AZ 125nXT (Datasheet as PDF)
AZ nLof 2070
Film thickness: 1.5 ... 15 μm (> 20 μm via multiple coating possible)
UV-sensitivity:i-line (365 nm), NOT g- or h-line sensitive
Sales volumes: 100 ml, 250 ml, 500 ml, 1000 ml, 2.5 L, 3.78 L (gallon)
AZ® nLOF™ 2000 series i-line photoresists are uniquely formulated to simplify the historically complex lift-off lithography process. They make it possible to run a standard lithography process to get the desired lift-off profiles. The nLOF 2000 series photoresists work well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers using standard conditions. The nLOF 2000 series photoresists can be used for coating thicknesses beyond 7.0 µm, achieving aspect ratios of up to 4:1.
| Features |
Benefits
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| High throughput |
- i-line dose to print < 100 mJ/cm2 for film thicknesses 2.0 to 3.5 µm
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| Streamlined lift-off process |
- Standard single-layer lithography process to achieve lift-off profiles; no extra process steps required
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| Process compatibility |
- Easy integration into an existing process with standard processing conditions
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| Process versatility |
- Obtain lift-off profiles with resist thickness > 7.0 µm, with uniform profiles up to 4:1 aspect ratios
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For further information refer Photoresist
AZ nLOF 2070.pdf and for further details for processing AZ 20xx details for processing.pdf
New Negativeresist - AZ® 15 nXT
Film thickness: 5 ... 30 μm i-line (365 nm)
UV-sensitivity: NOT g- or h-line sensitive
Sales volumes:100 ml, 250 ml, 500 ml, 1000 ml, 2.5 L, 3.78 L (gallon)
General Information
AZ® 15 nXT is a cross-linking, Cu-compatible negative resist especially designed for electro plating: Excellent adhesion, no underplating, vertical sidewall profiles, wide compatibility to plating solutions, including Cu, Ni, and Au.
Developer:
TMAH-based (AZ® 326/726/826 MIF)
AZ® 15 nXT structures (resist film thickness 10 μm)
For further information refer this new negative Fotoresist AZ 15nXT.pdf
New Negativeresist - AZ® 125 nXT
Ultra-Thick Negative Resist for Plating
Film thickness: 30 ... 150 μm (> 500 μm can also be realized)
UV-sensitivity: i-line (365 nm), NOT g- or h-line sensitive
Sales volumes: 100 ml, 250 ml, 500 ml, 1000 ml, 2.5 L, 3.78 L (gallon)
General Information
AZ® 125 nXT is a cross-linking negative resist for resist film thicknesses up to 100 μm and even more with very steep sidewalls.
The high stability and superior adhesion make the AZ® 125 nXT well suited for most electroplating applications where very thick films are required. This resist requires neither a post exposure bake nor any delays between the process steps.
Outstanding Properties
- 30 … 100 µm via single-coating
- Aqueous alkaline developers (such as the TMAH-based AZ 326/726/827 MIF)
- Excellent adhesion, no underplating
- No post exposure bake, no delays between process steps required
- Wide substrate compatibility: Cu, Au, Ti, NiFe, GaAs…
- Wide plating compatibility: Cu, Ni, Au, solder …
- Standard wet stripping processes
Developer
We recommend the TMAH-based, ready-to-use AZ® 326/726/826 MIF.
For further info AZ 125 nXT.pdf nd for further details for processing AZ 125 nXT details for processing.pdf
®AZ, the AZ logo, BARLi , Aquatar and
Kallista are registered trademarks of AZ Electronic
Materials.
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