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Photoresists
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Electroplating Photoresists
AZ 15nXT (Datasheet as PDF)
AZ 125nXT (Datasheet as PDF)
AZ 40XT (Datasheet as PDF)
AZ 9260 (Datasheet as PDF)
AZ® 15 nXT
Thick Negative Resist for Plating
Film thickness: 5 ... 30 μm
UV-sensitivity: i-line (365 nm), NOT g- or h-line sensitive
Sales volumes: 100 ml, 250 ml, 500 ml, 1000 ml, 2.5 L, 3.78 L (gallon)
General Information
AZ® 15 nXT is a cross-linking negative resist for resist film thicknesses up to approx. 30 μm. The high stability and superior adhesion make the AZ® 15 nXT well suited for most electroplating applications. The resist sidewalls are very steep up to a film thick- ness of approx. 10 μm, towards higher resist film thicknesses the resist profile be- comes more and more negative allowing the electrodeposition of structures which narrow from bottom to top.
Outstanding Properties
5 ... 20 μm resist film thickness via single-coating
Aqueous alkaline developers
Excellent adhesion, no underplating
Wide substrate compatibility: Cu, Au, Ti, NiFe, ...
Wide plating compatibility: Cu, Ni, Au, ...
Standard wet stripping processes
Developer
We recommend the TMAH-based, ready-to-use AZ® 326/726/826 MIF.
Removal
NMP or DMSO are suited removers. In case of very thick resist films, heating the re- movers up to 60-80°C, or/and ultrasonic treatment, might be beneficial to fasten the resist removal.
AZ® 15 nXT structures (resist film thickness 10 μm)
For further information refer this new negative Fotoresist AZ 15nXT.pdf
AZ® 125 nXT
Ultra-Thick Negative Resist for Plating
Film thickness: 30 ... 150 μm (> 500 μm can also be realized)
UV-sensitivity: i-line (365 nm), NOT g- or h-line sensitive
Sales volumes: 100 ml, 250 ml, 500 ml, 1000 ml, 2.5 L, 3.78 L (gallon)
General Information
AZ® 125 nXT is a cross-linking negative resist for resist film thicknesses up to 100 μm and even more with very steep sidewalls.
The high stability and superior adhesion make the AZ® 125 nXT well suited for most electroplating applications where very thick films are required. This resist requires neither a post exposure bake nor any delays between the process steps.
Outstanding Properties
- 30 … 100 µm via single-coating
- Aqueous alkaline developers (such as the TMAH-based AZ 326/726/827 MIF)
- Excellent adhesion, no underplating
- No post exposure bake, no delays between process steps required
- Wide substrate compatibility: Cu, Au, Ti, NiFe, GaAs…
- Wide plating compatibility: Cu, Ni, Au, solder …
- Standard wet stripping processes
Developer
We recommend the TMAH-based, ready-to-use AZ® 326/726/826 MIF.
For further info AZ 125 nXT.pdf nd for further details for processing AZ 125 nXT details for processing.pdf
AZ® 40 XT
Ultra-Thick Chemically Amplified Positive Resist
Film thickness: 30 ... 100 μm (> 100 μm via multiple coating possible)
UV-sensitivity: i-line (365 nm), NOT g- or h-line sensitive
Sales volumes: 100 ml, 250 ml, 500 ml, 1000 ml, 2.5 L, 3.78 L (gallon)
General Information
AZ® 40 XT is a chemically amplified positive resist for resist film thicknesses of approx. 30 - 100 μm. Its high viscosity allows high resist film thicknesses via single coating. Compared with standard positive thick resists, the chemical amplification and special chemistry makes the processing significantly faster and easier.
Outstanding Properties
Chemically amplified platform
Vertical profiles on aligners
Excellent photospeed; good develop time; TMAH developer compatible
Superior overall throughput
Superior adhesion on substrates
Superior DRIE performance, ideal for MEMS
Copper substrate compatible
Good plating compatibility
Standard wet strip process for removal
Developer
We recommend the TMAH-based, ready-to-use AZ® 326/726/826 MIF.
Removal
NMP or DMSO are suited removers. In case of very thick resist films, heating the re- movers up to 60-80°C, or/and ulgtrasonic treatment, might be beneficial to fasten the resist removal.
For further information refer AZ 40 XT.pdf
AZ 9260 thick film photoresist
Film thickness: 3 ... 20 μm, up to 150 μm by multiple coating (with restrictions)
UV-sensitivity: i- and h-line (310 - 410 nm), broadband or monochromatic
Sales volumes: 250 ml, 500 ml, 1000 ml, 2.5 L, and 3.78 L
General Information
AZ® 9260 thick film photoresist is designed for the more demanding higher-resolution thick resist requirements. It provides high-resolution with superior aspect ratios, as well as wide focus and exposure latitude and good sidewall profiles. AZ® 9260 photoresisti is available for a film thicknesses up to 24 µm.
Critical dimension resolutions range from < 1 µm lines and spaces at a film thickness of 4.6 µm, to 3.5 µm lines and spaces at a film thickness of 24 µm on silicon using today's standard broadband exposure tools. Aspect ratios of 5 - 7 can be achieved.
Under the guidance of leading thin-film recording head manufacturers, AZ® 9260 photoresist is optimized for both coil plating and top pole recording head applications.
Sensitivity to both h- and i-line makes AZ® 9260 photoresist capable for both broadband and i-line steppers.
Recommended developers are inorganicbased upon potassium hydroxide. The preferred developer is AZ® 400K Developer 1:4, a buffered developer designed to maximize bath life and process stability. For integrated circuit applications, TMAH developers such as AZ® 826 MIF developer can be used.
For further information refer AZ 9260.pdf
®AZ, the AZ logo, BARLi , Aquatar and
Kallista are registered trademarks of AZ Electronic
Materials.
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