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AZ nLof 2070 Photoresist

AZ nLof 2070
Thermally Stable Negative Resists

Film thickness: 1.5 ... 15 μm (> 20 μm via multiple coating possible)
UV-sensitivity:i-line (365 nm), NOT g- or h-line sensitive
Sales volumes: 100 ml, 250 ml, 500 ml, 1000 ml, 2.5 L, 3.78 L (gallon)

General Information
AZ^® nLOF™ 2000 series i-line photoresists are uniquely formulated to simplify the historically complex lift-off lithography process. They make it possible to run a standard lithography process to get the desired lift-off profiles. The nLOF 2000 series photoresists work well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers using standard conditions. The nLOF 2000 series photoresists can be used for coating thicknesses beyond 7.0 µm, achieving aspect ratios of up to 4:1.

Outstanding Properties
Very high thermal stability: Almost no rounding of cross-linked resist patterns up to temperatures of 250°C and more.
High chemical stability: Dependant on process parameters, AZ® nLOF 2000 is sta- ble against many organic solvents as well as strong alkaline media (however, not sta- ble against KOH Si-etches!).
The e-beam sensitivity of the AZ® nLOF 2000 resists allows the combination of fast UV and high-resolution e-beam lithography. Please contact us for further information!

Development
The recommended developers are AZ® MIF developers such as AZ® 726MIF or AZ® 826 MIF. Using other developers may prevent development (start) due to an (acci- dentally) thermally or optically induced partially crosslinked resist surface.

Stripper/Solubility
NMP (N-Methyl-2-pyrrolidone), DMSO, as well as KOH (> 3 %) are suitable for re- moval. Even completely cross-linked AZ® nLOF 2000 is lifted (not dissolved) from the substrate after a certain time (depending on resist film thickness and applied tem- peratures such as during post exposure bake, or hardbake).
Strongly crosslinked resist films require elevated (60-80°C) temperatures or/and ul- trasonic tratment for resist removal.
Acetone dissolves unexposed AZ® nLOF 2000 as long as no temperatures > 170°C have been applied before. At higher temperatures, thermal cross-linking strongly re- duces acetone solubility. Exposed and cross-linked (PEB > 90°C) AZ® nLOF is insolu- ble in acetone. However, if – in case of thick resist films – the substrate-near resist is not cross-linked due to the limited i-line penetration depth, acetone will diffuse through the cross-linked resist on top of it and lift the entire resist film from the sub- strate.

  
For further information refer Photoresist AZ nLOF 2070.pdf and for further details for processing AZ 20xx details for processing.pdf

^®AZ, the AZ logo, BARLi , Aquatar and Kallista are registered trademarks of AZ Electronic Materials.