Products       Downloads       Support        News        Company       Contact 

Adhesion Promotion

TI Prime (Datasheet as PDF)
HMDS (Datasheet as PDF)

TI Prime
The TI PRIME adhesion promoter improves resist adhesion on substrates such as Si or glass.
 
Processing the TI PRIME
(in chronological order)

• Substrate preparation: After (optional, but recommended) cleaning the substrate with acetone and subsequently isopropyle, put the substrate on the hotplate at a minimum temperature of 120 °C for 10 minutes to remove adsorbed water from the substrates surface. Alternatively, you can use a furnace at same temperature for 30 min.
• Spin coat the TI PRIME at approx. 2000-4000 U/min for approx. 20 seconds. After spin-coating, no residual drops or film of TI PRIME should be visible.
• Bake the substrate at 120°C for 2 minutes on the hotplate (when using a furnace, 130°C for 10 min is recommended)
• Proceed with spin-coating the resist immediately and proceed as usual.

Note: TI Prime contains Titanium. For CMOS processes use (eg. RCA-) cleaning
procedure of the substrates after lithography before you apply high-temperatures.

For further information refer:
TI_Prime.pdf or
Substrate Cleaning Adhesion Photoresist

HMDS
Available in 1 liter and 2.5 liter bottles in VLSI quality

For further information refer:
HMDS.pdf or
Substrate Cleaning Adhesion Photoresist